Manufacturer Part Number
IXFH12N120P
Manufacturer
IXYS Corporation
Introduction
The IXFH12N120P is a discrete semiconductor product, specifically a transistor - FET, MOSFET - Single.
Product Features and Performance
Through-hole mounting
TO-247-3 package
HiPerFET and Polar series
N-Channel MOSFET
Drain-source voltage (Vdss) of 1200 V
Maximum gate-source voltage (Vgs) of ±30 V
Maximum on-resistance (Rds(on)) of 1.35 Ω @ 500 mA, 10 V
Continuous drain current (Id) of 12 A @ 25°C (Tc)
Maximum input capacitance (Ciss) of 5400 pF @ 25 V
Maximum power dissipation of 543 W (Tc)
Threshold voltage (Vgs(th)) of 6.5 V @ 1 mA
Maximum gate charge (Qg) of 103 nC @ 10 V
Product Advantages
High voltage and current handling capabilities
Low on-resistance
Suitable for high-power switching applications
Key Technical Parameters
Drain-source voltage (Vdss): 1200 V
Gate-source voltage (Vgs): ±30 V
On-resistance (Rds(on)): 1.35 Ω @ 500 mA, 10 V
Continuous drain current (Id): 12 A @ 25°C (Tc)
Input capacitance (Ciss): 5400 pF @ 25 V
Power dissipation (Max): 543 W (Tc)
Threshold voltage (Vgs(th)): 6.5 V @ 1 mA
Gate charge (Qg): 103 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature applications (-55°C to 150°C)
Compatibility
Through-hole mounting
TO-247-3 package
Application Areas
High-power switching applications
Industrial power electronics
Motor drives
Power supplies
Inverters
Converters
Product Lifecycle
The IXFH12N120P is an active product, and there are no indications of it being discontinued or replaced.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Suitable for high-temperature and high-power applications
Reliable and RoHS3 compliant