Manufacturer Part Number
IXFH13N100
Manufacturer
IXYS Corporation
Introduction
High-Performance MOSFET Transistor
Part of the HiPerFET Series
Product Features and Performance
1000V Drain to Source Voltage (Vdss)
Maximum Continuous Drain Current (Id) of 12.5A at 25°C
Low On-Resistance (Rds On) of 900mOhm @ 500mA, 10V
High Power Dissipation Capability of 300W
Wide Operating Temperature Range of -55°C to 150°C
Fast Switching Characteristics
Product Advantages
Excellent High Voltage Handling Capability
Efficient Power Delivery with Low On-Resistance
Robust Thermal Performance
Reliable and Durable Operation
Key Technical Parameters
N-Channel MOSFET Technology
Vgs (Max) of ±20V
Input Capacitance (Ciss) of 4000pF @ 25V
Gate Charge (Qg) of 155nC @ 10V
Quality and Safety Features
RoHS3 Compliant
TO-247AD Package Provides Secure Mounting and Thermal Management
Compatibility
Suitable for a Wide Range of Power Electronics Applications
Application Areas
Switch Mode Power Supplies
Motor Drives
Inverters
Industrial Controls
Lighting Systems
Product Lifecycle
Currently in Active Production
Replacement and Upgrade Options Available
Key Reasons to Choose This Product
Exceptional High Voltage Handling Capability
Efficient Power Conversion with Low Losses
Robust Thermal Performance for Reliable Operation
Fast Switching Characteristics for High-Speed Applications
RoHS Compliance for Environmental Responsibility
