Manufacturer Part Number
IXFH13N80
Manufacturer
IXYS Corporation
Introduction
High-performance N-channel MOSFET transistor with 800V drain-source voltage rating.
Product Features and Performance
800V drain-source voltage rating
13A continuous drain current at 25°C
300W power dissipation
Low on-resistance of 800mΩ @ 500mA, 10V
High-speed switching with 155nC gate charge at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent performance for high-voltage, high-power applications
Robust and reliable design
Efficient heat dissipation with TO-247 package
Key Technical Parameters
Drain-source voltage (Vdss): 800V
Gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 800mΩ @ 500mA, 10V
Continuous drain current (Id): 13A at 25°C
Input capacitance (Ciss): 4200pF @ 25V
Power dissipation (Pd): 300W at Tc
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and power electronics applications
Product Lifecycle
Currently available
No known plans for discontinuation
Key Reasons to Choose This Product
Exceptional high-voltage and high-power performance
Efficient and reliable design
Wide operating temperature range
RoHS3 compliance for environmental safety
Compatibility with various high-voltage, high-power applications
