Manufacturer Part Number
IXFH12N90
Manufacturer
IXYS Corporation
Introduction
High-performance N-Channel MOSFET transistor in a TO-247 package.
Product Features and Performance
900V drain-source voltage
12A continuous drain current at 25°C
300W power dissipation
900mΩ maximum on-resistance at 6A, 10V
4200pF maximum input capacitance at 25V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Suitable for high-voltage, high-power applications
Excellent thermal performance
Low on-resistance for efficient power conversion
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 900V
Maximum Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 12A at 25°C
On-Resistance (Rds(on)): 900mΩ at 6A, 10V
Input Capacitance (Ciss): 4200pF at 25V
Power Dissipation (Tc): 300W
Quality and Safety Features
RoHS3 compliant
TO-247AD (IXFH) package for reliable operation
Tested for quality and safety standards
Compatibility
Suitable for high-power, high-voltage applications such as power supplies, motor drives, and power inverters.
Application Areas
Industrial
Automotive
Renewable Energy
Power Conversion
Product Lifecycle
This product is currently in production and available.
Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
Exceptional performance with high voltage and current handling capabilities
Efficient power conversion due to low on-resistance
Robust design for reliable operation in challenging environments
Compatibility with a wide range of high-power applications
Backed by the quality and expertise of IXYS Corporation
