Manufacturer Part Number
IXFH12N90P
Manufacturer
IXYS Corporation
Introduction
High-voltage N-channel MOSFET transistor with high power density and fast switching capabilities.
Product Features and Performance
Operating temperature range: -55°C to 150°C
Drain-to-source voltage (Vdss): 900V
Maximum gate-to-source voltage (Vgs): ±30V
On-state resistance (Rds(on)): 900mΩ @ 6A, 10V
Continuous drain current (Id): 12A @ 25°C
Input capacitance (Ciss): 3080pF @ 25V
Maximum power dissipation: 380W
Product Advantages
High power density
Fast switching capabilities
Wide operating temperature range
Low on-state resistance
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold voltage (Vgs(th)): 6.5V @ 1mA
Gate charge (Qg): 56nC @ 10V
Through-hole mounting
Quality and Safety Features
RoHS3 compliant
TO-247AD package
Compatibility
Compatible with a wide range of power electronic applications.
Application Areas
Power supplies
Motor drives
Inverters
Switchmode power converters
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
High power density and fast switching capabilities for efficient power conversion.
Wide operating temperature range for use in demanding environments.
Low on-state resistance for low conduction losses.
Robust and reliable TO-247AD package for high-voltage, high-current applications.
RoHS3 compliance for environmentally-friendly design.
