Manufacturer Part Number
IXBH40N160
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistors IGBTs Single
Product Features and Performance
RoHS3 Compliant
TO-247AD Packaging
-55°C ~ 150°C (TJ) Operating Temperature
350 W Max Power
1600 V Max Collector-Emitter Breakdown Voltage
33 A Max Collector Current
1 V Max Collector-Emitter Saturation Voltage @ 15 V, 20 A
130 nC Gate Charge
40 A Max Pulsed Collector Current
Standard Input Type
Through Hole Mounting
Product Advantages
High voltage and current capabilities
Low on-state resistance
Fast switching speed
Reliable performance in high-power applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1600 V
Current Collector (Ic) (Max): 33 A
Vce(on) (Max) @ Vge, Ic: 7.1 V @ 15 V, 20 A
Gate Charge: 130 nC
Current Collector Pulsed (Icm): 40 A
Quality and Safety Features
RoHS3 Compliant
Reliable performance in wide temperature range
Compatibility
TO-247-3 Package
TO-247AD Supplier Device Package
BIMOSFET Series
Application Areas
High-power industrial and consumer electronics
Motor drives
Power supplies
Welding equipment
Induction heating
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage and current capabilities for high-power applications
Low on-state resistance for efficient power conversion
Fast switching speed for high-frequency operation
Reliable performance over wide temperature range
RoHS3 compliant for environmental sustainability
