Manufacturer Part Number
IXBF20N360
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
ROHS3 Compliant
ISOPLUS i4-PAC Packaging
Through Hole Mounting
-55°C ~ 150°C Operating Temperature
230W Maximum Power
3600V Collector-Emitter Breakdown Voltage
45A Maximum Collector Current
4V Collector-Emitter Saturation Voltage @ 15V, 20A
7μs Reverse Recovery Time
43nC Gate Charge
220A Maximum Pulsed Collector Current
5mJ Turn-On, 4.3mJ Turn-Off Switching Energy
18ns Turn-On, 238ns Turn-Off Delay Time
Product Advantages
High Voltage and High Current Capability
Low On-State Voltage Drop
Fast Switching Speed
Compact ISOPLUS i4-PAC Packaging
Key Technical Parameters
Voltage Rating: 3600V
Current Rating: 45A
Switching Characteristics: 1.7μs Reverse Recovery Time, 18ns/238ns Turn-On/Turn-Off Delay
Quality and Safety Features
ROHS3 Compliant
Compatibility
BIMOSFET Series
Application Areas
High Voltage, High Current Power Switching Applications
Product Lifecycle
Currently in production
Replacement/Upgrade options available
Several Key Reasons to Choose This Product
High voltage and current handling capability
Low on-state voltage drop for high efficiency
Fast switching speed for high-frequency applications
Compact ISOPLUS i4-PAC packaging for space-constrained designs