Manufacturer Part Number
IXBH2N250
Manufacturer
IXYS Corporation
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
RoHS3 Compliant
TO-247AD Package
BIMOSFET Series
Tube Packaging
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 32 W
Collector-Emitter Breakdown Voltage: 2500 V
Collector Current (Max): 5 A
Collector-Emitter Saturation Voltage: 3.5 V @ 15 V, 2 A
Reverse Recovery Time: 920 ns
Gate Charge: 10.6 nC
Collector Current Pulsed (Max): 13 A
Standard Input Type
Through Hole Mounting
Product Advantages
High voltage and current capability
Low on-state resistance
Fast switching performance
Key Technical Parameters
Power Rating: 32 W
Collector-Emitter Breakdown Voltage: 2500 V
Collector Current (Max): 5 A
Collector-Emitter Saturation Voltage: 3.5 V @ 15 V, 2 A
Reverse Recovery Time: 920 ns
Gate Charge: 10.6 nC
Quality and Safety Features
RoHS3 Compliant
Operating Temperature Range: -55°C ~ 150°C (TJ)
Compatibility
TO-247AD Package
Application Areas
Industrial power electronics
Motor drives
Power supplies
Inverters
Product Lifecycle
Active product
Availability of replacements or upgrades may depend on market conditions
Several Key Reasons to Choose This Product
High voltage and current capability
Low on-state resistance
Fast switching performance
RoHS3 compliance
Wide operating temperature range
Suitable for various industrial power electronics applications
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