Manufacturer Part Number
IXBN75N170
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically an Insulated Gate Bipolar Transistor (IGBT) module.
Product Features and Performance
Operates at high voltages up to 1700V
Handles high currents up to 145A
Compact SOT-227B package for chassis mount
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power handling capabilities
Reliable and robust design
Compact and space-saving package
Key Technical Parameters
Input Capacitance (Cies): 6.93 nF @ 25V
Collector-Emitter Voltage (Vce): 1700V (max)
Collector Current (Ic): 145A (max)
Collector-Emitter Saturation Voltage (Vce(on)): 3.1V @ 15V, 75A
Quality and Safety Features
RoHS3 compliant
No NTC thermistor included
Compatibility
Can be used in a variety of power electronics applications
Application Areas
Suitable for use in power inverters, motor drives, and other high-power switching circuits
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling capabilities
Reliable and robust design
Wide operating temperature range
Compact and space-saving package
RoHS3 compliance for environmental considerations
