Manufacturer Part Number
IXBH9N160G
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically a single transistor of the IGBT (Insulated Gate Bipolar Transistor) type.
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Maximum power: 100 W
Maximum collector-emitter breakdown voltage: 1600 V
Maximum collector current: 9 A
Maximum collector-emitter saturation voltage (Vce(on)): 7 V @ 15 V, 5 A
Gate charge: 34 nC
Maximum pulsed collector current: 10 A
Standard input type
Through-hole mounting
Product Advantages
High voltage and current handling capabilities
Wide operating temperature range
Efficient power switching performance
Reliable and robust design
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1600 V
Current Collector (Ic) (Max): 9 A
Vce(on) (Max) @ Vge, Ic: 7V @ 15V, 5A
Gate Charge: 34 nC
Current Collector Pulsed (Icm): 10 A
Quality and Safety Features
RoHS3 compliant
TO-247AD package
Compatibility
This IGBT transistor is compatible with various power electronics and industrial control applications.
Application Areas
Power conversion and control systems
Motor drives
Switching power supplies
Industrial automation and control
Product Lifecycle
The IXBH9N160G is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding applications
Wide operating temperature range for versatile usage
Efficient power switching performance for improved energy efficiency
Reliable and robust design for long-term operation
RoHS3 compliance for environmental considerations
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