IXBH5N160G - IXYS

Manufacturer Part Number

IXBH5N160G

Manufacturer

IXYS Corporation

Introduction

This product is a discrete semiconductor device, specifically an Insulated-Gate Bipolar Transistor (IGBT) in a single transistor configuration.

Product Features and Performance

Designed for power switching applications

Capable of handling high voltages up to 1600 V

Rated for a maximum collector current of 5.7 A

Low on-state voltage drop (Vce(on)) of 7.2 V at 15 V gate voltage and 3 A collector current

Low gate charge of 26 nC

Operating temperature range of -55°C to 150°C

Product Advantages

High voltage handling capability

Low on-state resistance for efficient power conversion

Suitable for high-power switching applications

Reliable performance across a wide temperature range

Key Technical Parameters

Collector-Emitter Breakdown Voltage (Max): 1600 V

Collector Current (Max): 5.7 A

On-state Voltage Drop (Max): 7.2 V

Gate Charge: 26 nC

Operating Temperature Range: -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Housed in a reliable TO-247AD package

Compatibility

This IGBT is compatible with a variety of power electronics applications and can be used in conjunction with other components to create power conversion systems.

Application Areas

Power supplies

Motor drives

Inverters

Welding equipment

Industrial automation

Renewable energy systems

Product Lifecycle

This product is currently in production and is not nearing discontinuation. Replacement or upgraded models may be available in the future as technology evolves.

Key Reasons to Choose This Product

High voltage handling capability up to 1600 V

Low on-state resistance for efficient power conversion

Reliable performance across a wide temperature range of -55°C to 150°C

RoHS3 compliance for environmental responsibility

Proven performance in a wide range of power electronics applications