Manufacturer Part Number
IXBH5N160G
Manufacturer
IXYS Corporation
Introduction
This product is a discrete semiconductor device, specifically an Insulated-Gate Bipolar Transistor (IGBT) in a single transistor configuration.
Product Features and Performance
Designed for power switching applications
Capable of handling high voltages up to 1600 V
Rated for a maximum collector current of 5.7 A
Low on-state voltage drop (Vce(on)) of 7.2 V at 15 V gate voltage and 3 A collector current
Low gate charge of 26 nC
Operating temperature range of -55°C to 150°C
Product Advantages
High voltage handling capability
Low on-state resistance for efficient power conversion
Suitable for high-power switching applications
Reliable performance across a wide temperature range
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 1600 V
Collector Current (Max): 5.7 A
On-state Voltage Drop (Max): 7.2 V
Gate Charge: 26 nC
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Housed in a reliable TO-247AD package
Compatibility
This IGBT is compatible with a variety of power electronics applications and can be used in conjunction with other components to create power conversion systems.
Application Areas
Power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in production and is not nearing discontinuation. Replacement or upgraded models may be available in the future as technology evolves.
Key Reasons to Choose This Product
High voltage handling capability up to 1600 V
Low on-state resistance for efficient power conversion
Reliable performance across a wide temperature range of -55°C to 150°C
RoHS3 compliance for environmental responsibility
Proven performance in a wide range of power electronics applications
IXBN75N170IXYSIGBT MOD 1700V 145A 625W SOT227B