Manufacturer Part Number
IXBH12N300
Manufacturer
IXYS Corporation
Introduction
High-voltage, high-current IGBT transistor for power switching applications.
Product Features and Performance
High voltage rating up to 3000V
High current rating up to 30A
Low on-state voltage drop
Fast reverse recovery time of 1.4μs
Low gate charge of 62nC
Pulsed current rating up to 100A
Wide operating temperature range of -55°C to 150°C
Product Advantages
Robust and reliable performance
Efficient power switching
Suitable for high-power applications
Easy to integrate into circuit designs
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 3000V
Collector Current (Max): 30A
Collector-Emitter Saturation Voltage: 3.2V @ 15V, 12A
Reverse Recovery Time: 1.4μs
Gate Charge: 62nC
Pulsed Collector Current: 100A
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
TO-247AD package
Compatibility
This IGBT transistor is compatible with a wide range of power electronics applications.
Application Areas
Power inverters
Motor drives
Welding equipment
Induction heating
High-power switching circuits
Product Lifecycle
The IXBH12N300 is an active product. Replacement or upgrade options may be available.
Key Reasons to Choose This Product
High voltage and current ratings for efficient power switching
Fast reverse recovery time for improved efficiency
Low on-state voltage drop for reduced power losses
Wide operating temperature range for versatile applications
Robust and reliable performance for demanding environments
Easy integration into circuit designs
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