Manufacturer Part Number
IXBH32N300
Manufacturer
IXYS Corporation
Introduction
High-power IGBT transistor designed for a variety of industrial and consumer applications.
Product Features and Performance
400W power rating
3000V collector-emitter breakdown voltage
80A maximum collector current
2V max collector-emitter saturation voltage
5μs reverse recovery time
142nC gate charge
Product Advantages
Robust and reliable performance
High power density
Suitable for high-voltage, high-current applications
Low on-state voltage drop
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 3000V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 32A
Reverse Recovery Time (trr): 1.5μs
Gate Charge: 142nC
Quality and Safety Features
RoHS3 compliant
TO-247AD package for improved thermal performance
Compatibility
Through-hole mounting
Compatible with standard IGBT gate drive circuits
Application Areas
Industrial motor drives
Welding equipment
Uninterruptible power supplies (UPS)
Power inverters and converters
Home appliances
Product Lifecycle
Currently in production
Replacement and upgrade options available from IXYS
Key Reasons to Choose this Product
Excellent power handling capability
High voltage and current ratings
Fast switching performance
Reliable and durable construction
RoHS compliance for environmental friendliness
Wide range of industrial and consumer applications
IXB144WJZZQSharp Microelectronics