Manufacturer Part Number
IXBH42N170
Manufacturer
IXYS Corporation
Introduction
High-power IGBT transistor for industrial applications
Product Features and Performance
Operating temperature range: -55°C to 150°C
Power rating: 360 W
Collector-Emitter Breakdown Voltage: 1700 V
Collector Current (max): 80 A
Collector-Emitter Saturation Voltage: 2.8 V @ 15 V, 42 A
Reverse Recovery Time: 1.32 μs
Gate Charge: 188 nC
Pulsed Collector Current: 300 A
Product Advantages
High voltage and current handling capability
Low conduction and switching losses
Fast switching speed
Reliable performance in high-power applications
Key Technical Parameters
Voltage, Current, Power Ratings
Switching Characteristics (Reverse Recovery Time, Gate Charge)
Thermal Characteristics (Operating Temperature Range)
Quality and Safety Features
RoHS3 compliant
TO-247AD package for reliable operation
Compatibility
Suitable for industrial power electronics applications
Application Areas
Motor drives
Power inverters
Welding equipment
Induction heating
Uninterruptible Power Supplies (UPS)
Product Lifecycle
Currently in active production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
High power density and efficiency
Reliable performance in harsh environments
Proven technology for industrial power applications
Compatibility with a wide range of industrial systems