AFT09S282NR3 - NXP USA Inc.

Manufacturer Part Number

AFT09S282NR3

Manufacturer

NXP Semiconductors

Introduction

The AFT09S282NR3 is a high-performance RF power MOSFET transistor designed for use in a variety of high-frequency applications.

Product Features and Performance

80W output power

20dB gain

Operating frequency up to 960MHz

Capable of handling high voltages up to 70V

Low on-resistance for efficient operation

Product Advantages

Excellent power handling and efficiency

Robust design for reliable performance

Suitable for a wide range of RF applications

Key Technical Parameters

Power Output: 80W

Current (Test): 1.4A

Voltage (Rated): 70V

Gain: 20dB

Voltage (Test): 28V

Frequency: 960MHz

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant

Reliable LDMOS technology

Compatibility

Suitable for use in various RF power amplifier designs

Application Areas

Radio frequency (RF) power amplifiers

Wireless communication systems

Radar and satellite communications

Industrial, scientific, and medical (ISM) equipment

Product Lifecycle

This product is an active and widely available RF power MOSFET from NXP Semiconductors.

Replacement or upgrade options may be available from NXP or other manufacturers.

Key Reasons to Choose This Product

High output power and efficiency for demanding RF applications

Robust and reliable LDMOS design for long-term performance

Versatile compatibility and suitability for a wide range of RF equipment

Readily available and well-supported by the manufacturer