Manufacturer Part Number
AFT18S230-12NR3
Manufacturer
NXP Semiconductors
Introduction
This product is a high-performance RF MOSFET transistor designed for use in various radio frequency (RF) applications.
Product Features and Performance
LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistor technology
Capable of delivering up to 50W of output power
Operates at a frequency of 1.88GHz
Provides a gain of 17.6dB
Rated for a voltage of 65V and a current of 1.4A
Product Advantages
Excellent power handling and efficiency
Robust design for reliable performance
Suitable for a wide range of RF applications
Key Technical Parameters
Transistor Type: LDMOS
Power Output: 50W
Current (Test): 1.4A
Voltage (Rated): 65V
Gain: 17.6dB
Voltage (Test): 28V
Frequency: 1.88GHz
Quality and Safety Features
Lead-free / RoHS compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Compatibility
This RF MOSFET transistor is designed to be compatible with a variety of RF circuits and applications.
Application Areas
Radio frequency (RF) power amplifiers
Wireless communications equipment
Radar systems
Broadcast transmitters
Industrial, scientific, and medical (ISM) applications
Product Lifecycle
The AFT18S230-12NR3 is an active and currently available product from NXP Semiconductors. There are no immediate plans for discontinuation, and replacement or upgrade options may be available.
Key Reasons to Choose This Product
Exceptional power handling and efficiency for RF applications
Reliable and robust LDMOS transistor design
Suitable for a wide range of frequencies and power requirements
Compliant with RoHS regulations for environmental friendliness
Availability of support and compatibility with various RF systems