Manufacturer Part Number
AFT18H357-24SR6
Manufacturer
NXP Semiconductors
Introduction
High-performance LDMOS RF power transistor for cellular infrastructure applications
Product Features and Performance
63W output power
3dB gain
81GHz operating frequency
65V rated voltage
800mA test current
Chassis mount package
Product Advantages
Reliable and efficient performance for cellular base stations
Suitable for various cellular infrastructure applications
Robust LDMOS technology
Key Technical Parameters
Power output: 63W
Gain: 17.3dB
Voltage rating: 65V
Operating frequency: 1.81GHz
Test current: 800mA
Quality and Safety Features
RoHS3 compliant
NI-1230-4LS2L package
Compatibility
Suitable for cellular infrastructure applications
Application Areas
Cellular base stations
Wireless communication infrastructure
Product Lifecycle
Currently in active production
Replacements and upgrades available from the manufacturer
Key Reasons to Choose This Product
Reliable and efficient performance for cellular infrastructure
Proven LDMOS technology
Suitable for a wide range of cellular applications
Compliant with RoHS3 standards
Availability of replacement and upgrade options
