Manufacturer Part Number
AFT18P350-4S2LR6
Manufacturer
NXP Semiconductors
Introduction
This is a high-performance LDMOS transistor for radio frequency (RF) applications.
Product Features and Performance
63W output power
1A test current
65V rated voltage
1dB gain
28V test voltage
81GHz operating frequency
Chassis mount design
Product Advantages
Excellent RF performance
High power handling capability
Robust and reliable design
Key Technical Parameters
LDMOS technology
Dual configuration
NI-1230-4LS2L package
Quality and Safety Features
RoHS3 compliant
Compatibility
Can be used in a variety of RF applications
Application Areas
Suitable for use in radio frequency (RF) circuits and systems
Product Lifecycle
Currently available
No information on discontinuation or upgrades
Several Key Reasons to Choose This Product
High output power
Excellent RF performance
Robust and reliable design
RoHS compliance
