Manufacturer Part Number
AFT18S290-13SR3
Manufacturer
NXP Semiconductors
Introduction
High-performance RF LDMOS power transistor
Product Features and Performance
63W output power at 1.96GHz
2dB gain
2A test current
28V test voltage
Operates at 65V rated voltage
Suitable for 1.96GHz wireless infrastructure applications
Product Advantages
High power and efficiency
Robust and reliable performance
Optimized for 1.96GHz frequency band
Key Technical Parameters
Technology: LDMOS
Mounting Type: Chassis Mount
Package: Tape & Reel (TR)
Quality and Safety Features
RoHS3 compliant
Compatibility
Manufacturer's packaging: NI-880XS-2L4S
Supplier Device Package: NI-880XS-2L4S
Application Areas
Wireless infrastructure equipment
Radio frequency power amplifiers
Product Lifecycle
Currently in production
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent high-frequency performance with 63W output power
High gain and efficiency for improved system performance
Robust and reliable design for demanding applications
Compatibility with standard packaging and mounting