Manufacturer Part Number
AFT20P060-4NR3
Manufacturer
NXP Semiconductors
Introduction
High-performance radio frequency (RF) MOSFET transistor designed for use in high-power amplifier applications.
Product Features and Performance
60W output power
9dB gain
Operates at 2.17GHz frequency
Dual N-channel LDMOS (laterally diffused metal-oxide-semiconductor) technology
Capable of 450mA test current
Rated for 65V voltage
Product Advantages
High power handling capability
Excellent RF performance
Reliable LDMOS technology
Suitable for high-power amplifier applications
Key Technical Parameters
Manufacturer Part Number: AFT20P060-4NR3
Package: OM-780-4L surface mount
Configuration: 2 N-Channel
Technology: LDMOS (Dual)
Power Output: 60W
Current Test: 450mA
Voltage Rated: 65V
Gain: 18.9dB
Voltage Test: 28V
Frequency: 2.17GHz
Quality and Safety Features
Robust LDMOS design for reliability
Undergoes rigorous testing and quality control
Compatibility
Suitable for use in high-power RF amplifier circuits and systems
Application Areas
Cellular base stations
Wireless infrastructure equipment
High-power radio frequency (RF) amplifiers
Product Lifecycle
Currently in production
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High output power capability
Excellent RF performance metrics
Proven LDMOS technology for reliability
Compatibility with high-power RF amplifier applications
Ongoing manufacturer support and availability