AFT20P060-4NR3 - NXP Semiconductors

Manufacturer Part Number

AFT20P060-4NR3

Manufacturer

NXP Semiconductors

Introduction

High-performance radio frequency (RF) MOSFET transistor designed for use in high-power amplifier applications.

Product Features and Performance

60W output power

9dB gain

Operates at 2.17GHz frequency

Dual N-channel LDMOS (laterally diffused metal-oxide-semiconductor) technology

Capable of 450mA test current

Rated for 65V voltage

Product Advantages

High power handling capability

Excellent RF performance

Reliable LDMOS technology

Suitable for high-power amplifier applications

Key Technical Parameters

Manufacturer Part Number: AFT20P060-4NR3

Package: OM-780-4L surface mount

Configuration: 2 N-Channel

Technology: LDMOS (Dual)

Power Output: 60W

Current Test: 450mA

Voltage Rated: 65V

Gain: 18.9dB

Voltage Test: 28V

Frequency: 2.17GHz

Quality and Safety Features

Robust LDMOS design for reliability

Undergoes rigorous testing and quality control

Compatibility

Suitable for use in high-power RF amplifier circuits and systems

Application Areas

Cellular base stations

Wireless infrastructure equipment

High-power radio frequency (RF) amplifiers

Product Lifecycle

Currently in production

Replacement or upgrade options available from the manufacturer

Key Reasons to Choose This Product

High output power capability

Excellent RF performance metrics

Proven LDMOS technology for reliability

Compatibility with high-power RF amplifier applications

Ongoing manufacturer support and availability