Manufacturer Part Number
AFT18S230SR3
Manufacturer
NXP Semiconductors
Introduction
This product is a discrete semiconductor transistor from NXP Semiconductors, specifically a Laterally Diffused Metal Oxide Semiconductor (LDMOS) Field-Effect Transistor (FET).
Product Features and Performance
Power output of 50W
Operating current of 1.8A
Rated voltage of 65V
Gain of 19dB
Operating frequency of 1.88GHz
Chassis mount packaging
Product Advantages
Robust LDMOS technology providing high power and efficiency
Suitable for use in high-power RF and wireless applications
Reliable and durable construction
Key Technical Parameters
LDMOS technology
50W power output
65V rated voltage
8A operating current
19dB gain
88GHz operating frequency
NI-780S package
Quality and Safety Features
RoHS3 compliant
Reliable and durable construction
Compatibility
This product is compatible with various high-power RF and wireless applications.
Application Areas
Wireless base stations
RF power amplifiers
Broadcast transmitters
Industrial RF equipment
Product Lifecycle
This product is currently in production and available for purchase. No information is available on planned discontinuation or availability of replacements/upgrades.
Several Key Reasons to Choose This Product
Robust LDMOS technology providing high power and efficiency
Suitable for use in a wide range of high-power RF and wireless applications
Reliable and durable construction
RoHS3 compliant