Manufacturer Part Number
AFT09MS015NT1
Manufacturer
NXP Semiconductors
Introduction
The AFT09MS015NT1 is a high-performance RF power MOSFET transistor designed for use in a variety of RF power amplifier applications.
Product Features and Performance
16W output power
2dB gain
Operates at 870MHz frequency
Supports 40V rated voltage
100mA test current
5V test voltage
LDMOS technology
Product Advantages
High power output
Excellent gain performance
Suitable for 870MHz frequency applications
Can handle high voltages
Surface mount packaging for easy integration
Key Technical Parameters
Power Output: 16W
Gain: 17.2dB
Voltage Rating: 40V
Test Current: 100mA
Test Voltage: 12.5V
Frequency: 870MHz
Packaging: Surface Mount (PLD-1.5W)
Quality and Safety Features
RoHS3 compliant
Reliable LDMOS technology
Compatibility
Suitable for use in RF power amplifier circuits
Application Areas
Wireless communication systems
Radio frequency power amplifiers
Cellular base stations
Radar systems
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High power output for demanding applications
Excellent gain performance for efficient operation
Capable of operating at 870MHz frequency
Can handle high voltages up to 40V
Surface mount packaging for easy integration
RoHS3 compliant for environmental responsibility
Reliable LDMOS technology for long-term performance