AFT09MS007NT1 - NXP USA Inc.

Manufacturer Part Number

AFT09MS007NT1

Manufacturer

NXP Semiconductors

Introduction

This product is a discrete semiconductor device, specifically a radio frequency (RF) transistor based on LDMOS (laterally diffused metal-oxide-semiconductor) technology.

Product Features and Performance

High output power of 7.3W

Operates at a frequency of 870MHz

Gain of 15.2dB

Rated voltage of 30V

Test voltage of 7.5V

Test current of 100mA

Surface mount package (PLD-1.5W)

Product Advantages

Robust LDMOS technology for reliable performance

High power handling capability

Suitable for RF power amplifier applications

Key Technical Parameters

Manufacturer Part Number: AFT09MS007NT1

Package: PLD-1.5W, Tape & Reel (TR)

Technology: LDMOS

Power Output: 7.3W

Current (Test): 100mA

Voltage (Rated): 30V

Voltage (Test): 7.5V

Gain: 15.2dB

Frequency: 870MHz

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 compliant

Compatibility

This RF transistor is designed for use in various RF power amplifier applications.

Application Areas

Wireless communications

RF power amplifiers

Base stations

Repeaters

Broadcast transmitters

Product Lifecycle

The product is currently in production and available for purchase. No information on discontinuation or availability of replacements or upgrades.

Key Reasons to Choose This Product

Robust LDMOS technology for reliable performance

High output power of 7.3W

Suitable for 870MHz frequency applications

Surface mount package for easy integration

RoHS3 compliance for environmental sustainability