Manufacturer Part Number
AFT05MS004NT1
Manufacturer
NXP Semiconductors
Introduction
Discrete semiconductor product
Transistor FET, MOSFET RF
Product Features and Performance
LDMOS technology
Power output: 4.9W
Test current: 100mA
Rated voltage: 30V
Gain: 20.9dB
Test voltage: 7.5V
Frequency: 520MHz
Product Advantages
High power output
Good gain performance
Suitable for RF applications
Key Technical Parameters
RoHS3 compliant
Surface mount package (SOT-89A)
Tape and reel packaging
Quality and Safety Features
Reliable LDMOS technology
RoHS3 compliance for environmental safety
Compatibility
Suitable for various RF circuit designs
Application Areas
RF power amplifier circuits
Wireless communication systems
Product Lifecycle
Current production model, no discontinuation planned
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power output and gain characteristics
Reliable LDMOS technology
RoHS3 compliance for environmental responsibility
Surface mount package for easy integration
Proven suitability for RF power amplifier applications