Manufacturer Part Number
AFT05MS031GNR1
Manufacturer
NXP Semiconductors
Introduction
The AFT05MS031GNR1 is a high-performance radio frequency (RF) power MOSFET transistor designed for use in various RF power amplifier applications.
Product Features and Performance
31W output power
7dB gain
Operates at 520MHz frequency
40V rated voltage
10mA test current
6V test voltage
LDMOS technology
Product Advantages
High output power
Good gain performance
Suitable for 520MHz frequency applications
Capable of handling high voltages
Surface mount package for easy integration
Key Technical Parameters
Power output: 31W
Current: 10mA
Voltage: 40V
Gain: 17.7dB
Frequency: 520MHz
Mounting type: Surface mount
Quality and Safety Features
RoHS3 compliant
TO-270-2 GULL package
Compatibility
Compatible with various RF power amplifier designs
Application Areas
Suitable for use in RF power amplifier circuits
Applicable in various wireless communication systems
Product Lifecycle
Currently available product
No information on planned discontinuation or replacements
Key Reasons to Choose This Product
High output power and gain performance
Suitable for 520MHz frequency applications
Capable of handling high voltages
Surface mount package for easy integration
RoHS3 compliant for environmental safety