Manufacturer Part Number
AFT05MS006NT1
Manufacturer
NXP Semiconductors
Introduction
High-performance RF power MOSFET transistor designed for use in 520 MHz wireless applications.
Product Features and Performance
6W output power
3 dB gain at 520 MHz
30V rated voltage
100 mA test current
Surface mount packaging
Product Advantages
Optimized for 520 MHz operation
High power and efficiency
Reliable LDMOS technology
RoHS3 compliant
Key Technical Parameters
Power Output: 6W
Current (Test): 100 mA
Voltage (Rated): 30V
Gain: 18.3dB
Voltage (Test): 7.5V
Frequency: 520MHz
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 compliant
Reliable LDMOS transistor technology
Compatibility
Suitable for use in 520 MHz wireless applications
Application Areas
Wireless communications equipment
RF power amplifier circuits
520 MHz industrial, scientific, and medical (ISM) applications
Product Lifecycle
Current product, no plans for discontinuation
Replacement and upgrade options available from NXP Semiconductors
Key Reasons to Choose This Product
High power output and efficiency at 520 MHz
Optimized RF performance for 520 MHz operation
Reliable LDMOS technology for long-term durability
Surface mount packaging for ease of integration
RoHS3 compliance for use in environmentally-conscious designs