Manufacturer Part Number
IPD60R600P7SAUMA1
Manufacturer
Infineon Technologies
Introduction
The IPD60R600P7SAUMA1 is a high-performance N-channel MOSFET from Infineon Technologies, designed for a wide range of power conversion and switching applications.
Product Features and Performance
600V MOSFET with low on-resistance (RDS(on) = 600mΩ @ 1.7A, 10V)
Optimized for high-efficiency power conversion and switching
Low gate charge (Qg = 9nC @ 10V) for fast switching
Wide operating temperature range (-40°C to 150°C)
High current capability (6A continuous drain current @ 25°C)
Low input capacitance (Ciss = 363pF @ 400V)
Product Advantages
Improved energy efficiency in power conversion circuits
High reliability and robustness for demanding applications
Reduced switching losses and improved thermal management
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Gate-to-Source Voltage (VGS): ±20V
Drain Current (ID): 6A continuous @ 25°C
On-Resistance (RDS(on)): 600mΩ @ 1.7A, 10V
Input Capacitance (Ciss): 363pF @ 400V
Power Dissipation (PD): 30W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to the highest quality standards
Compatibility
Suitable for a wide range of power conversion and switching applications, including AC/DC and DC/DC converters, motor drives, and switched-mode power supplies.
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
Currently in production
No plans for discontinuation
Replacement or upgrade options available from Infineon Technologies
Key Reasons to Choose This Product
High efficiency and low switching losses for improved energy savings
Robust and reliable performance for demanding applications
Wide operating temperature range for use in diverse environmental conditions
Compact and easy-to-integrate surface-mount package
Extensive application support and availability from a trusted semiconductor manufacturer
