Manufacturer Part Number
IPD60R600E6
Manufacturer
Infineon Technologies
Introduction
The IPD60R600E6 is a high-performance CoolMOS™ E6 series N-channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
600V drain-to-source voltage rating
Low on-resistance (Rds(on)) of 600mΩ
Continuous drain current (ID) of 7.3A at 25°C
Low gate charge (Qg) of 20.5nC
Wide operating temperature range of -55°C to 150°C
Optimized for high-efficiency switch-mode power supplies and motor drives
Product Advantages
Superior energy efficiency due to low conduction and switching losses
Reliable and robust performance
Compact surface-mount package
Suitable for high-voltage, high-power density applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ @ 2.4A, 10V
Continuous Drain Current (ID): 7.3A at 25°C
Input Capacitance (Ciss): 440pF @ 100V
Power Dissipation (Ptot): 63W at 25°C
Quality and Safety Features
RoHS3 compliant
Meets high-reliability standards for industrial and automotive applications
Compatibility
The IPD60R600E6 is compatible with a wide range of high-voltage, high-power applications, including:
Switch-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Application Areas
Industrial equipment
Renewable energy systems
Home appliances
Power tools
Automotive electronics
Product Lifecycle
The IPD60R600E6 is an active product in Infineon's CoolMOS™ E6 series. Replacement or upgrade options may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent energy efficiency and power density
Reliable and robust performance
Compact and easy-to-integrate surface-mount package
Suitable for a wide range of high-voltage, high-power applications
Backed by Infineon's expertise and quality standards
