Manufacturer Part Number
IPD60R600C6ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET with CoolMOS C6 technology
Product Features and Performance
600V drain-source voltage
Very low on-resistance
High switching speed
Low gate charge
Product Advantages
Reduced power losses
Improved energy efficiency
Compact design
Key Technical Parameters
Drain-source voltage: 600V
On-resistance: 600mOhm @ 2.4A, 10V
Continuous drain current: 7.3A (at 25°C)
Input capacitance: 440pF @ 100V
Power dissipation: 63W (at Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
TO-252-3 (D-Pak) package
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial electronics
Product Lifecycle
Current product, no discontinuation planned
Replacement/upgrade options available
Key Reasons to Choose This Product
Excellent performance and energy efficiency
Compact and reliable design
Extensive temperature range support
Compatibility with standard packaging