Manufacturer Part Number
IPD60R600P6
Manufacturer
Infineon Technologies
Introduction
The IPD60R600P6 is a high-voltage N-channel power MOSFET from Infineon Technologies, designed for various power conversion and control applications.
Product Features and Performance
600V breakdown voltage
Low on-resistance of 600mΩ
Continuous drain current of 7.3A at 25°C
Fast switching performance
Low gate charge of 12nC
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and thermal performance
Robust design for reliable operation
Suitable for high-voltage and high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Maximum Gate-to-Source Voltage (Vgs(max)): ±20V
On-Resistance (Rds(on)): 600mΩ @ 2.4A, 10V
Input Capacitance (Ciss): 557pF @ 100V
Power Dissipation (Tc): 63W
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Compatible with TO-252-3 (DPak) package
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
The IPD60R600P6 is an active product in Infineon's portfolio and is not nearing discontinuation.
Replacement or upgrade options may be available from Infineon or other manufacturers.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance for high-voltage, high-power applications
Robust design and wide operating temperature range for reliable operation
Suitable for safety-critical applications with RoHS3 compliance
Compatibility with standard TO-252-3 package for easy integration
