Manufacturer Part Number
IPD60R600CP
Manufacturer
Infineon Technologies
Introduction
High-voltage N-channel power MOSFET in PG-TO252-3 package
Part of the CoolMOS CP series
Product Features and Performance
Drain-source voltage (Vdss) up to 600 V
On-resistance (Rds(on)) as low as 600 mΩ
Continuous drain current (Id) up to 6.1 A at 25°C
Fast switching speed and low gate charge
Optimized for high-frequency and high-efficiency applications
Product Advantages
Excellent power density
Low conduction and switching losses
Reliable performance in high-voltage applications
Key Technical Parameters
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Operating temperature range: -55°C to 150°C
Vgs (Max): ±20 V
Power dissipation (Max): 60 W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for various high-voltage, high-frequency power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Renewable energy systems
Industrial and consumer electronics
Product Lifecycle
Active product, not nearing discontinuation
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and safe operation in high-voltage applications
Optimized for high-frequency and high-efficiency designs
Wide range of technical parameters to meet various application needs
IPD60R650CE MOSCypress Semiconductor (Infineon Technologies)