Manufacturer Part Number
IPD60R600P7ATMA1
Manufacturer
Infineon Technologies
Introduction
High-voltage, high-efficiency MOSFET designed for power conversion applications.
Product Features and Performance
600V drain-source voltage
600mΩ maximum on-resistance
6A continuous drain current at 25°C
Low input capacitance of 363pF
Maximum junction temperature of 150°C
High-speed switching capability
Product Advantages
Excellent efficiency due to low on-resistance
Robust design for reliable operation
Compact surface-mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 600mΩ
Drain Current (Id): 6A
Input Capacitance (Ciss): 363pF
Power Dissipation (Ptot): 30W
Quality and Safety Features
RoHS3 compliant
High-reliability design for industrial and automotive applications
Compatibility
Compatible with standard MOSFET drivers and controllers
Application Areas
Switching power supplies
Motor drives
Renewable energy systems
Industrial automation and control
Product Lifecycle
This product is an active and widely used MOSFET solution from Infineon.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent efficiency and low power losses due to the low on-resistance
Robust and reliable design for demanding industrial and automotive applications
Compact surface-mount package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
High-speed switching capability for high-frequency power conversion
