Manufacturer Part Number
IPD60R750E6
Manufacturer
Infineon Technologies
Introduction
Single N-Channel MOSFET Transistor
Product Features and Performance
600V Drain-Source Voltage
750 mΩ maximum On-Resistance
7A continuous Drain Current at 25°C
-55°C to 150°C Operating Temperature Range
373 pF maximum Input Capacitance
48W maximum Power Dissipation
2 nC maximum Gate Charge
Product Advantages
High efficiency due to low on-resistance
High reliability with excellent thermal performance
Suitable for high voltage, high power applications
Key Technical Parameters
Drain-Source Voltage: 600V
Gate-Source Voltage: ±20V
On-Resistance: 750 mΩ
Drain Current: 5.7A
Input Capacitance: 373 pF
Power Dissipation: 48W
Quality and Safety Features
RoHS3 Compliant
Designed for safe and reliable operation
Compatibility
Industry-standard TO-252-3 (D-Pak) package
Application Areas
Switching power supplies
Motor drives
Lighting ballasts
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and widely available.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Reliable and safe operation
Suitable for a wide range of high-voltage, high-power applications
Readily available in industry-standard packaging