Manufacturer Part Number
IPD60R650CEAUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel CoolMOS CE MOSFET with low RDS(on) and fast switching capabilities.
Product Features and Performance
Optimized for high-frequency, high-efficiency applications
Low conduction and switching losses
Fast switching due to low gate charge
Reduced EMI/EMC issues
Product Advantages
Improved energy efficiency
Reduced system size and cost
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
On-State Resistance (RDS(on)): 650mΩ
Continuous Drain Current (ID): 9.9A
Input Capacitance (Ciss): 440pF
Power Dissipation: 82W
Quality and Safety Features
RoHS3 compliant
Suitable for harsh environments (-40°C to 150°C)
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Power factor correction circuits
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacements or upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent energy efficiency and low power losses
Fast switching capabilities for high-frequency applications
Reliable and robust design for harsh environments
Compact size and easy integration into power electronic systems
Broad compatibility and suitability for various power conversion applications
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