Manufacturer Part Number
IPD60R950C6
Manufacturer
Infineon Technologies
Introduction
High-performance, low-loss N-channel CoolMOS C6 power MOSFET
Product Features and Performance
600V drain-source voltage
950mΩ on-resistance (max)
4A continuous drain current (at 25°C)
Low gate charge of 13nC (max)
Wide operating temperature range of -55°C to 150°C
Surface mount package (TO-252-3)
Product Advantages
Excellent efficiency and reduced power losses
Compact design with high power density
Robust and reliable operation
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 950mΩ (max)
Drain Current (ID): 4.4A (at 25°C)
Input Capacitance (Ciss): 280pF (max)
Power Dissipation (Ptot): 37W
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Home appliances
Industrial automation
Renewable energy systems
Product Lifecycle
This product is an active, in-production part from Infineon. Replacements and upgrades may be available in the future.
Key Reasons to Choose
Excellent efficiency and low power losses
Compact and high-power density design
Wide operating temperature range
Robust and reliable performance
Compliance with RoHS3 regulations
IPD60R950C6A