Manufacturer Part Number
IPD60R3K3C6
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
N-Channel
600V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
3Ohm Maximum On-State Resistance (Rds(on))
7A Continuous Drain Current (Id) at 25°C
93pF Maximum Input Capacitance (Ciss) at 100V
1W Maximum Power Dissipation at Tc
6nC Maximum Gate Charge (Qg) at 10V
-55°C to 150°C Operating Temperature Range
Product Advantages
CoolMOS C6 Technology
High Voltage and Efficient Switching
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate to Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 3.3Ohm @ 500mA, 10V
Continuous Drain Current (Id): 1.7A at 25°C
Input Capacitance (Ciss): 93pF at 100V
Power Dissipation (Max): 18.1W at Tc
Gate Charge (Qg): 4.6nC at 10V
Quality and Safety Features
Manufacturer: Infineon Technologies
Packaging: PG-TO252-3, Tape & Reel (TR)
Mounting Type: Surface Mount
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Application Areas
Suitable for high voltage and efficient switching applications
Product Lifecycle
Current product offering, no indication of discontinuation
Replacement and upgrade options may be available
Key Reasons to Choose This Product
CoolMOS C6 technology for high voltage and efficient switching
Low on-state resistance and input capacitance for improved performance
Wide operating temperature range of -55°C to 150°C
Reliable and robust design from Infineon Technologies
Surface mount packaging for flexible integration
IPD60R3K4CECypress Semiconductor (Infineon Technologies)