Manufacturer Part Number
IPD60R360PFD7SAUMA1
Manufacturer
Infineon Technologies
Introduction
This product is a high-performance N-Channel MOSFET transistor from Infineon Technologies' CoolMOS PFD7 series.
Product Features and Performance
600V drain-to-source voltage rating
360mOhm maximum on-resistance at 2.9A, 10V
10A continuous drain current at 25°C case temperature
534pF maximum input capacitance at 400V
43W maximum power dissipation at Tc
Capable of operating in -40°C to 150°C temperature range
Product Advantages
Improved efficiency through ultra-low on-resistance
Reduced switching losses due to optimized gate charge
Excellent thermal performance and power handling capability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs Max): ±20V
Threshold Voltage (Vgs(th) Max): 4.5V @ 140A
On-Resistance (Rds(on) Max): 360mOhm @ 2.9A, 10V
Quality and Safety Features
RoHS3 compliant
TO-252-3 (D-Pak) surface mount package
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Offline power supplies
Home appliances
Industrial motor drives
Lighting ballasts
Product Lifecycle
This is an active and available product from Infineon Technologies.
Key Reasons to Choose This Product
Excellent efficiency and power handling capabilities
Optimized gate charge for reduced switching losses
Robust and reliable design for demanding applications
Long-term product availability and support from a leading manufacturer
IPD60R3K4CECypress Semiconductor (Infineon Technologies)