Manufacturer Part Number
IPD60R360P7SAUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with CoolMOS P7 technology for efficient power conversion applications.
Product Features and Performance
Drain-to-source voltage (Vdss) of 600V
On-resistance (Rds(on)) of 360mΩ at 2.7A, 10V
Continuous drain current (Id) of 9A at 25°C case temperature
Input capacitance (Ciss) of 555pF at 400V
Power dissipation (Ptot) of 41W at 25°C case temperature
Wide operating temperature range of -40°C to 150°C
Product Advantages
Improved energy efficiency through low conduction losses
Reduced switching losses due to advanced CoolMOS P7 technology
Increased power density and overall system efficiency
Robust design for reliable operation
Key Technical Parameters
N-channel MOSFET with CoolMOS P7 technology
Vdss: 600V, Rds(on): 360mΩ, Id: 9A
Ciss: 555pF, Qg: 13nC, Ptot: 41W
Operating temperature: -40°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for surface mount applications
Reliable and robust design
Compatibility
Compatible with various power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Solar inverters
Industrial automation and control
Product Lifecycle
Currently available, no discontinuation planned
Replacement and upgrade options available from Infineon
Key Reasons to Choose This Product
Excellent energy efficiency through low conduction and switching losses
Robust and reliable performance across a wide temperature range
High power density and system efficiency
Ease of integration and compatibility with various applications
Compliance with RoHS3 requirements for environmental sustainability
IPD60R360PCypress Semiconductor (Infineon Technologies)