IPD60R380C6 - Infineon Technologies

Manufacturer Part Number

IPD60R380C6

Manufacturer

Infineon Technologies

Introduction

This is a discrete semiconductor product, specifically a single transistor - Field Effect Transistor (FET), Metal Oxide Semiconductor FET (MOSFET) from Infineon Technologies.

Product Features and Performance

600V Drain-Source Voltage

380mΩ maximum On-State Resistance

6A maximum Continuous Drain Current at 25°C

700pF maximum Input Capacitance

83W maximum Power Dissipation

N-Channel FET type

5V maximum Gate-Source Threshold Voltage

10V Drive Voltage (maximum On-State Resistance, minimum On-State Resistance)

32nC maximum Gate Charge

Product Advantages

High voltage and low on-resistance for efficient power conversion

Low input capacitance for fast switching

Wide operating temperature range of -55°C to 150°C

Key Technical Parameters

Drain-Source Voltage: 600V

Gate-Source Voltage: ±20V

On-State Resistance: 380mΩ

Drain Current: 10.6A

Input Capacitance: 700pF

Power Dissipation: 83W

Gate-Source Threshold Voltage: 3.5V

Gate Charge: 32nC

Quality and Safety Features

RoHS3 compliant

TO-252-3 (D-PAK) surface mount package

Compatibility

This MOSFET is part of the CoolMOS C6 series and is designed for a variety of power conversion applications.

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Power factor correction circuits

Product Lifecycle

The IPD60R380C6 is an active product and not nearing discontinuation. Replacement or upgraded products may be available in the CoolMOS series.

Key Reasons to Choose This Product

High voltage and low on-resistance for efficient power conversion

Fast switching capabilities due to low input capacitance

Wide operating temperature range for increased reliability

RoHS3 compliant for environmental considerations

Surface mount package for compact design