Manufacturer Part Number
IPD60R2K1CEAUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance MOSFET transistor for power conversion applications
Product Features and Performance
600V N-channel CoolMOS CE series MOSFET
Low on-state resistance (RDS(on)) of 2.1Ω
Optimized for high-efficiency switched-mode power supplies (SMPS)
Fast switching speed and low gate charge (Qg)
Wide operating temperature range of -40°C to 150°C
Product Advantages
Improved efficiency in power conversion applications
Reduced power losses and heat generation
Robust and reliable performance
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Gate-to-Source Voltage (VGS): ±20V
Continuous Drain Current (ID): 2.3A
Input Capacitance (Ciss): 140pF
Power Dissipation (Ptot): 38W
Quality and Safety Features
RoHS3 compliant
ESD protection
Compatibility
Suitable for a variety of power conversion applications, such as SMPS, inverters, and motor drives
Application Areas
Switched-mode power supplies (SMPS)
Inverters
Motor drives
Power factor correction (PFC) circuits
Product Lifecycle
Current product, no discontinuation plans
Key Reasons to Choose This Product
Excellent efficiency and low power losses
Robust and reliable performance over a wide temperature range
Optimized switching characteristics for high-frequency power conversion
RoHS3 compliance for environmental friendliness