Manufacturer Part Number
IPD60R1K5CEAUMA1
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-Channel MOSFET transistor from Infineon Technologies' CoolMOS CE series. It is designed for a wide range of power electronics applications.
Product Features and Performance
600V drain to source voltage
5Ω maximum on-state resistance
5A continuous drain current at 25°C
Extremely low gate charge of 9.4nC at 10V
Wide operating temperature range of -40°C to 150°C
Product Advantages
Excellent power efficiency and low conduction losses
Robust design for reliable operation
Compact TO-252-3 package for space-saving applications
Optimized for high-frequency switching
Key Technical Parameters
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±20V
On-State Resistance (RDS(on)): 1.5Ω @ 1.1A, 10V
Drain Current (ID): 5A (at 25°C)
Input Capacitance (Ciss): 200pF @ 100V
Power Dissipation (Pd): 49W (at Tc)
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and long-term operation
Compatibility
This MOSFET is compatible with a wide range of power electronics applications, including switch-mode power supplies, motor drives, and inverters.
Application Areas
Switched-mode power supplies (SMPS)
Industrial motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Lighting ballasts
Solar inverters
Product Lifecycle
This product is currently available and not nearing discontinuation. Replacement or upgraded models may become available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power efficiency and low conduction losses
Robust and reliable design for long-term operation
Compact TO-252-3 package for space-saving applications
Optimized for high-frequency switching
Wide operating temperature range
RoHS3 compliance for environmental responsibility
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IPD60R1K4C6BTMA1INENOI