Manufacturer Part Number
IPD60R1K4C6
Manufacturer
Infineon Technologies
Introduction
The IPD60R1K4C6 is a high-performance N-channel MOSFET from Infineon's CoolMOS C6 series, designed for a wide range of power conversion applications.
Product Features and Performance
High-voltage (600V) operation
Ultra-low on-resistance (1.4Ω @ 1.1A, 10V)
Low input capacitance (200pF @ 100V)
Fast switching speed
High power density and efficiency
Product Advantages
Excellent power conversion efficiency
Reduced switching losses
Compact and space-saving design
Robust and reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 3.2A @ 25°C (Tc)
Power Dissipation (Pd): 28.4W (Tc)
Gate Charge (Qg): 9.4nC @ 10V
Quality and Safety Features
RoHS3 compliant
MOSFET technology provides high reliability and long lifespan
Compatibility
Suitable for a wide range of power conversion applications, including switched-mode power supplies, motor drives, and industrial electronics.
Application Areas
Switch-mode power supplies (SMPS)
Motor drives
Household appliances
Industrial automation and control
Renewable energy systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacements and upgrades are available from the manufacturer.
Key Reasons to Choose This Product
Excellent power conversion efficiency and low switching losses for improved system performance
Compact and space-saving design for flexible integration
Robust and reliable performance for long-term operation
Wide range of applications and compatibility with various power conversion systems
IPD60R1K0CECypress Semiconductor (Infineon Technologies)
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