Manufacturer Part Number
IPD60R180P7SAUMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
600V Drain-Source Voltage (Vdss)
180mΩ Maximum On-Resistance (Rds(on))
18A Continuous Drain Current (Id) at 25°C
1081pF Maximum Input Capacitance (Ciss)
72W Maximum Power Dissipation (Tc)
-40°C to 150°C Operating Temperature Range
Product Advantages
Efficient power conversion with low on-resistance
High voltage handling capability
Compact surface mount package
Suitable for various power applications
Key Technical Parameters
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 280A
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Quality and Safety Features
RoHS3 Compliant
PG-TO252-3 Manufacturer's Packaging
Compatibility
TO-252-3, DPak (2 Leads + Tab), SC-63 Package
Application Areas
Switch-mode power supplies
Motor drives
AC/DC and DC/DC converters
Industrial and consumer electronics
Product Lifecycle
Current product, no indication of discontinuation
Several Key Reasons to Choose This Product
Excellent power efficiency and low on-resistance
High voltage capability for various applications
Compact surface mount package for space-constrained designs
Reliable operation within a wide temperature range
RoHS3 compliance for environmental safety
IPD60R180C7Cypress Semiconductor (Infineon Technologies)
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