IPD60N10S4L12ATMA1 - Infineon Technologies

Manufacturer Part Number

IPD60N10S4L12ATMA1

Manufacturer

Infineon Technologies

Introduction

This is a high-performance N-Channel power MOSFET from Infineon Technologies, designed for automotive and industrial applications.

Product Features and Performance

100V Drain-Source Voltage (Vdss)

60A Continuous Drain Current (Id)

Ultra-low On-Resistance (Rds(on)) of 12mΩ

Fast switching performance

Automotive-qualified (AEC-Q101)

Wide operating temperature range of -55°C to 175°C

Product Advantages

Excellent energy efficiency due to low conduction and switching losses

Robust design for reliable operation in harsh environments

Compact and space-saving DPak (TO-252-3) package

Key Technical Parameters

Vgs(max): ±16V

Vgs(th) (max): 2.1V @ 46A

Ciss (max): 3170pF @ 25V

Qg (max): 49nC @ 10V

Power Dissipation (max): 94W

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Compatibility

Compatible with various industrial and automotive control systems

Application Areas

Automotive electronics (e.g., motor drives, power management)

Industrial power conversion (e.g., inverters, converters, power supplies)

Product Lifecycle

This product is an active and in-production part from Infineon Technologies.

Key Reasons to Choose This Product

Excellent performance and energy efficiency

Robust design for reliable operation in harsh environments

Automotive-qualified for use in demanding applications

Compact and space-saving package

Broad compatibility with various industrial and automotive systems