Manufacturer Part Number
IPD600N25N3GATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
Supports high drain-source voltage of up to 250V
Low on-resistance of 60mOhm at 25A, 10V
Continuous drain current of 25A at 25°C case temperature
Wide operating temperature range from -55°C to 175°C
Fast switching and low gate charge of 29nC at 10V
Optimized for high-efficiency power conversion applications
Product Advantages
Excellent power density and efficiency
Robust and reliable performance
Suitable for a wide range of power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 250V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60mOhm @ 25A, 10V
Continuous Drain Current (Id): 25A @ 25°C
Input Capacitance (Ciss): 2350pF @ 100V
Power Dissipation (Pd): 136W @ Tc
Quality and Safety Features
RoHS3 compliant
Halogen-free and lead-free construction
Compatibility
Surface mount package (PG-TO252-3)
Compatible with a wide range of power electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available from Infineon
Key Reasons to Choose This Product
High efficiency and power density for improved system performance
Robust and reliable operation over a wide temperature range
Optimized for high-frequency, high-power conversion applications
Surface mount package for easy integration into compact designs
Supported by Infineon's extensive technical resources and product lifecycle management
IPD600N25N3GINFINE0N