Manufacturer Part Number
IPD60R180P7ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Designed for high-efficiency, high-power applications
Product Features and Performance
600V drain-to-source voltage
Low on-resistance of 180mΩ
Continuous drain current of 18A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low gate charge of 25nC at 10V
Low input capacitance of 1081pF at 400V
Product Advantages
Excellent efficiency and low power losses
Improved thermal management
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (VDS): 600V
Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 180mΩ @ 5.6A, 10V
Continuous Drain Current (ID): 18A @ 25°C
Input Capacitance (Ciss): 1081pF @ 400V
Power Dissipation (PD): 72W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for use in a wide range of power electronics applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial and consumer electronics
Product Lifecycle
Currently in production
Replacement or upgrade options available from Infineon
Key Reasons to Choose
Excellent efficiency and low power losses
Reliable and robust design
Suitable for high-power, high-voltage applications
Proven performance in a wide range of industries
IPD60R180P7SCypress Semiconductor (Infineon Technologies)
IPD60R170CFD7INENOI