Manufacturer Part Number
IPD60R1K0CEAUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in TO-252-3 (D-Pak) package
Product Features and Performance
600V drain-source voltage
Low on-resistance of 1Ω at 1.5A, 10V gate voltage
High current capability up to 6.8A at 25°C case temperature
Fast switching with low gate charge of 13nC at 10V gate voltage
Wide operating temperature range from -40°C to 150°C
Product Advantages
Excellent trade-off between high voltage capability and low on-resistance
Suitable for high-frequency, high-efficiency power conversion applications
Compact and reliable TO-252-3 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1Ω @ 1.5A, 10V
Continuous Drain Current (Id): 6.8A @ 25°C case temperature
Input Capacitance (Ciss): 280pF @ 100V
Power Dissipation (Ptot): 61W @ 25°C case temperature
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Suitable for high-frequency, high-efficiency power conversion applications such as:
Switched-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Application Areas
Industrial electronics
Renewable energy systems
Household appliances
Telecom power supplies
Product Lifecycle
This product is currently in active production and is not nearing discontinuation. Infineon Technologies offers a range of compatible and upgraded MOSFET solutions as replacement or upgrade options.
Several Key Reasons to Choose This Product
Excellent performance-to-cost ratio with low on-resistance and high voltage capability
Reliable and compact TO-252-3 package for efficient power conversion
Wide operating temperature range suitable for demanding applications
Designed and manufactured to high quality standards for long-term reliability
Compatibility with a wide range of power conversion applications
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