Manufacturer Part Number
IPD50R399CP
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Part of the CoolMOS CP series
Product Features and Performance
Drain-Source Voltage (Vdss) of 500V
On-state resistance (Rds(on)) of 399mΩ @ 4.9A, 10V
Continuous Drain Current (ID) of 9A at 25°C
Input Capacitance (Ciss) of 890pF @ 100V
Power Dissipation (Ptot) of 83W at 25°C
Product Advantages
Low on-state resistance for high efficiency
Fast switching for high-frequency applications
Wide operating temperature range of -55°C to 150°C
Robust ESD protection
Key Technical Parameters
MOSFET technology: N-Channel
Gate-Source Voltage (Vgs) range: ±20V
Gate Threshold Voltage (Vgs(th)): 3.5V @ 330A
Gate Charge (Qg): 23nC @ 10V
Quality and Safety Features
Meets AEC-Q101 automotive qualification standards
RoHS and REACH compliant
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Welding equipment
Industrial and consumer electronics
Product Lifecycle
This product is an active and readily available part
No discontinuation or obsolescence is expected in the near future
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Robust design for harsh operating conditions
Proven reliability in a wide range of power electronics applications
Availability of technical support and resources from Infineon Technologies
IPD50R380CFINF