Manufacturer Part Number
IPD50R2K0CEAUMA1
Manufacturer
Infineon Technologies
Introduction
Infineon's IPD50R2K0CEAUMA1 is a high-performance N-channel MOSFET transistor designed for diverse power electronics applications.
Product Features and Performance
500V drain-source voltage rating
2Ω maximum on-state resistance at 600mA, 13V
4A continuous drain current at 25°C
124pF maximum input capacitance at 100V
33W maximum power dissipation at Tc
Product Advantages
Excellent energy efficiency through low on-state resistance
High voltage handling capability
Compact TO-252-3 package for space-constrained designs
Suitable for high-frequency switching applications
Key Technical Parameters
Drain-source voltage (Vdss): 500V
Gate-source voltage (Vgs): ±20V
On-state resistance (Rds(on)): 2Ω @ 600mA, 13V
Drain current (Id): 2.4A @ 25°C
Input capacitance (Ciss): 124pF @ 100V
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation up to 150°C
Compatibility
The IPD50R2K0CEAUMA1 is compatible with a wide range of power electronics applications, including:
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial automation equipment
Application Areas
Power conversion
Motor control
Lighting systems
Industrial electronics
Product Lifecycle
The IPD50R2K0CEAUMA1 is an active product, and Infineon continues to provide support and availability. Upgrades and replacements may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent energy efficiency through low on-state resistance
High voltage handling capability for versatile applications
Compact packaging for space-constrained designs
Suitable for high-frequency switching applications
Reliable operation at high temperatures up to 150°C
RoHS3 compliance for environmentally-friendly use
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