Manufacturer Part Number
IPD50R3K0CEAUMA1
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
500V Drain to Source Voltage
±20V Gate to Source Voltage
3Ω On-Resistance @ 400mA, 13V
7A Continuous Drain Current @ 25°C
84pF Input Capacitance @ 100V
26W Power Dissipation (Max)
3nC Gate Charge @ 10V
Product Advantages
High Voltage Capability
Low On-Resistance
Surface Mount Packaging
Key Technical Parameters
ROHS3 Compliant
TO-252-3 (DPak) Package
-55°C to 150°C Operating Temperature
Tape & Reel Packaging
Quality and Safety Features
Designed for Reliability and Safety
Compatibility
Compatible with Various Electronic Circuits and Applications
Application Areas
Suitable for Power Conversion, Motor Control, and other High Voltage Applications
Product Lifecycle
Currently Available
Potential Replacements or Upgrades May Be Released in the Future
Key Reasons to Choose This Product
High Voltage Handling Capability
Low On-Resistance for Efficient Power Conversion
Compact Surface Mount Packaging for Space-Constrained Designs
Wide Operating Temperature Range for Diverse Applications
IPD50R380CFINF